FCU600N65S3R0
MOSFET N-CH 650V 6A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi SuperFET® III FCU600N65S3R0 is a 650V N-Channel Power MOSFET designed for efficient power conversion. This device features a continuous drain current of 6A (Tc) at 25°C and a maximum power dissipation of 54W (Tc). The low on-resistance specified is 600mOhm at 3A, 10V (Vgs). Key parameters include a gate charge (Qg) of 11 nC (max) at 10V and an input capacitance (Ciss) of 465 pF (max) at 400V. The FCU600N65S3R0 is housed in a TO-251-3 Stub Leads, IPAK package for through-hole mounting and operates across a wide temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supplies and industrial motor control.
Additional Information
Series: SuperFET® IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 600µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 465 pF @ 400 V |
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