FCPF9N60NTYDTU
MOSFET N-CH 600V 9A TO220F-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SupreMOS™ FCPF9N60NTYDTU is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 9A at 25°C. With a maximum on-resistance (Rds On) of 385mOhm at 4.5A and 10V gate-source voltage, it offers low conduction losses. The device is packaged in a TO-220F-3 (Y-Forming) configuration for through-hole mounting. Key parameters include a gate charge (Qg) of 29 nC at 10V and an input capacitance (Ciss) of 1240 pF at 100V. This component is suitable for applications in power supplies, motor control, and lighting. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: SupreMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 385mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 (Y-Forming) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240 pF @ 100 V |
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