FCPF9N60NT
MOSFET N-CH 600V 9A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperMOS™ series FCPF9N60NT is a 600 V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a low Rds(on) of 385mOhm at 4.5A and 10V Vgs, facilitating reduced conduction losses. With a continuous drain current rating of 9A and a maximum power dissipation of 29.8W at 25°C, it is suitable for demanding power supply designs. The TO-220F-3 package with through-hole mounting simplifies integration into existing circuit layouts. Key parameters include a gate charge of 29 nC at 10V and input capacitance of 1240 pF at 100V, enabling efficient switching performance. This MOSFET is commonly utilized in power factor correction (PFC) circuits, switched-mode power supplies (SMPS), and general-purpose power switching within the consumer electronics and industrial automation sectors.
Additional Information
Series: SuperMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 385mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 29.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240 pF @ 100 V |
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