FCPF7N60T
MOSFET N-CH 600V 7A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi SuperFET™ N-Channel MOSFET, part number FCPF7N60T, offers 600V drain-source breakdown voltage and 7A continuous drain current at 25°C case temperature. This TO-220F-3 packaged device features a maximum on-resistance of 600mOhm at 3.5A and 10V gate-source voltage. With a gate charge of 30 nC and input capacitance of 920 pF, it is suitable for power switching applications. The device operates across a wide temperature range of -55°C to 150°C and has a maximum power dissipation of 31W. This component finds utility in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: SuperFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V |
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