FCPF7N60NT
MOSFET N-CH 600V 6.8A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FCPF7N60NT is a SupreMOS™ series N-Channel Power MOSFET designed for demanding applications. This device features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 6.8A at 25°C (Tc). With a maximum power dissipation of 30.5W (Tc) and a low on-resistance (Rds On) of 520mOhm at 3.4A and 10V gate drive, it offers efficient power switching. Key parameters include a gate charge (Qg) of 35.6 nC at 10V and an input capacitance (Ciss) of 960 pF at 100V. The FCPF7N60NT is housed in a TO-220F-3 through-hole package, suitable for industrial power supplies, lighting, and motor control applications. Operating temperature ranges from -55°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: SupreMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30.5W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 100 V |
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