FCPF7N60
MOSFET N-CH 600V 7A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FCPF7N60 is a SuperFET™ N-Channel MOSFET designed for high-efficiency power conversion applications. This device features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C (Tc). With a maximum on-resistance (Rds On) of 600mOhm at 3.5A and 10V Vgs, it minimizes conduction losses. The TO-220F-3 package offers efficient thermal management with a power dissipation of 31W (Tc). Key parameters include a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 920 pF at 25V. This MOSFET is suitable for use in power supplies, lighting, and industrial motor control systems.
Additional Information
Series: SuperFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V |
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