FCPF600N60ZL1
MOSFET N-CH 650V 7.4A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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This onsemi SuperFET® III N-Channel MOSFET, part number FCPF600N60ZL1, is a high-performance power device designed for demanding applications. Featuring a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 7.4 A at 25°C, this component offers robust switching capabilities. The device boasts a low on-resistance (Rds On) of 600 mOhms at 3.7 A and 10 V gate-source voltage, coupled with a maximum power dissipation of 28 W. Key electrical characteristics include a gate charge (Qg) of 26 nC at 10 V and an input capacitance (Ciss) of 1120 pF at 25 V. The FCPF600N60ZL1 is housed in a TO-220F-3 package, suitable for through-hole mounting. Its operating temperature range spans from -55°C to 150°C (TJ). This MOSFET is well-suited for use in power factor correction, switch mode power supplies, and industrial motor control applications.
Additional Information
Series: SuperFET® IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 25 V |
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