FCPF4300N80Z
MOSFET N-CH 800V 1.6A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperFET® II series FCPF4300N80Z is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 800 V and a continuous Drain Current (Id) of 1.6 A at 25°C. With a maximum Rds On of 4.3 Ohms at 800 mA and 10 V gate drive, it offers efficient switching characteristics. The device boasts a low gate charge (Qg) of 8.8 nC at 10 V and an input capacitance (Ciss) of 355 pF at 100 V. Packaged in a TO-220F-3 through-hole configuration, it has a maximum power dissipation of 19.2 W. This MOSFET is suitable for use in power supply units, industrial power, and lighting applications.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3Ohm @ 800mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 19.2W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 160µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 355 pF @ 100 V |
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