FCPF400N80ZL1
MOSFET N-CH 800V 11A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi SuperFET® II N-Channel MOSFET, part number FCPF400N80ZL1, offers an 800 V drain-source breakdown voltage and a continuous drain current of 11 A at 25°C (Tc). This TO-220F-3 packaged device features a maximum on-resistance of 400 mOhm at 5.5 A and 10 V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 56 nC (max) at 10 V and input capacitance (Ciss) of 2350 pF (max) at 100 V. The device supports a drive voltage of 10 V and has a ±20 V maximum gate-source voltage. With a power dissipation of 35.7 W (Tc), this MOSFET is suitable for applications in power supply units, industrial motor control, and lighting solutions. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35.7W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.1mA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 100 V |
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