FCPF260N60E-F154
MOSFET N-CH 600V 15A TO220F-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperFET® II MOSFET, part number FCPF260N60E-F154, is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 15A (Tj) at 25°C. The device exhibits a low on-resistance (Rds On) of 260mOhm maximum at 7.5A, 10V, and a typical gate charge (Qg) of 62 nC at 10V. With a maximum power dissipation of 36W (Tc), it is suitable for applications requiring efficient power handling. The TO-220F-3 Full Pack package with through-hole mounting facilitates integration into various circuit designs. Key specifications include an input capacitance (Ciss) of 2500 pF maximum at 25V and a threshold voltage (Vgs(th)) of 3.5V maximum at 250µA. This component is commonly utilized in power supply units, lighting, and motor control systems.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tj) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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