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FCPF22N60NT

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FCPF22N60NT

MOSFET N-CH 600V 22A TO220F

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FCPF22N60NT is a SupreMOS™ series N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 22A at 25°C. With a maximum on-resistance (Rds On) of 165mOhm at 11A and 10V gate-source voltage, it offers efficient switching. The device has a total gate charge (Qg) of 45nC at 10V and input capacitance (Ciss) of 1950pF at 100V. Packaged in a TO-220F-3 through-hole configuration, the FCPF22N60NT boasts a maximum power dissipation of 39W (Tc). Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, lighting, and motor control applications.

Additional Information

Series: SupreMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Rds On (Max) @ Id, Vgs165mOhm @ 11A, 10V
FET Feature-
Power Dissipation (Max)39W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220F-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±45V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1950 pF @ 100 V

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