FCPF2250N80Z
MOSFET N-CH 800V 2.6A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperFET® II FCPF2250N80Z is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) capability of 2.6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 2.25 Ohms at 1.3A and 10V gate drive, it offers efficient power switching. The device exhibits a low gate charge (Qg) of 14 nC at 10V and an input capacitance (Ciss) of 585 pF at 100V. Packaged in a TO-220F-3 through-hole configuration, it supports a maximum power dissipation of 21.9W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.25Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 21.9W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 260µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 585 pF @ 100 V |
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