FCPF20N60TYDTU
MOSFET N-CH 600V 20A TO220F-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FCPF20N60TYDTU is a SuperFET™ series N-Channel MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at 25°C. With a maximum power dissipation of 39W (Tc), it offers a low Rds On of 190mOhm at 10A and 10V. The device utilizes MOSFET technology and is packaged in a TO-220F-3 (Y-Forming) through-hole configuration for robust thermal performance. Key parameters include a gate charge (Qg) of 98 nC (max) at 10V and input capacitance (Ciss) of 3080 pF (max) at 25V. This component is suitable for use in power supplies, motor control, and lighting applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: SuperFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 (Y-Forming) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3080 pF @ 25 V |
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