FCPF190N65S3R0L
MOSFET N-CH 650V 17A TO220F-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi SuperFET® III MOSFET, part number FCPF190N65S3R0L, is a 650V N-Channel power MOSFET. It features a low Rds(on) of 190mOhm at 8.5A, 10V, and a continuous drain current of 17A (Tc) at 25°C. With a gate charge (Qg) of 33 nC (Max) @ 10V and input capacitance (Ciss) of 1350 pF (Max) @ 400V, this device is designed for efficient switching applications. The MOSFET is housed in a TO-220F-3 package, suitable for through-hole mounting, and offers a maximum power dissipation of 144W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This component is utilized in various power conversion systems, including power supplies, industrial motor drives, and renewable energy inverters.
Additional Information
Series: SuperFET® IIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.7mA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 400 V |
Request a Quote
Clients Also Buy
FCD600N65S3R0
MOSFET N-CH 650V 6A DPAK
NTHL082N65S3F
MOSFET N-CH 650V 40A TO247-3
NTHL040N65S3F
MOSFET N-CH 650V 65A TO247-3
