FCPF190N65S3L1
MOSFET N-CH 650V 14A TO220F-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi SuperFET® III FCPF190N65S3L1 is a 650V N-Channel Power MOSFET in a TO-220F-3 package. This device offers a continuous drain current of 14A at 25°C and a maximum power dissipation of 33W. Key electrical parameters include a Vgs(th) of 4.5V at 1.4mA and a low on-resistance of 190mOhm maximum at 7A, 10V. The gate charge (Qg) is specified at 30 nC maximum at 10V, and the input capacitance (Ciss) is 1225 pF maximum at 400V. Designed for through-hole mounting, this MOSFET operates across a temperature range of -55°C to 150°C. It is suitable for applications in power factor correction, switched-mode power supplies, and general-purpose high-voltage switching.
Additional Information
Series: SuperFET® IIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.4mA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1225 pF @ 400 V |
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