FCPF190N65FL1
MOSFET N-CH 650V 20.6A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi SuperFET® II series N-Channel Power MOSFET, part number FCPF190N65FL1. This TO-220F-3 packaged device offers a 650V drain-to-source breakdown voltage and a continuous drain current of 20.6A at 25°C (Tc). Featuring a maximum on-resistance of 190mOhm at 10A, 10V, this MOSFET is driven by a 10V gate voltage. Key parameters include a gate charge (Qg) of 78nC (max) at 10V and input capacitance (Ciss) of 3055pF (max) at 100V. The device operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 39W (Tc). This component is suitable for applications in power supply units, motor control, and renewable energy systems.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3055 pF @ 100 V |
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