FCPF190N60-F152
MOSFET N-CH 600V 20.2A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperFET® II MOSFET, part number FCPF190N60-F152, is a 600V N-Channel power MOSFET. It features a low Rds(on) of 199mOhm at 10A and 10V, with a continuous drain current of 20.2A (Tc). Key parameters include a gate charge Qg of 74 nC @ 10V and input capacitance Ciss of 2950 pF @ 25V. This component utilizes advanced MOSFET technology and is housed in a TO-220F-3 package for through-hole mounting. The device operates across a wide temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 39W (Tc). This MOSFET is suitable for applications in power supply units, motor control, and lighting systems.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 39W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V |
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