FCPF165N65S3R0L
MOSFET N-CH 650V 19A TO220F-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperFET® III MOSFET, part number FCPF165N65S3R0L, is an N-Channel power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 650V and a continuous Drain current (Id) of 19A at 25°C (Tc). The Rds On is specified at a maximum of 165mOhm at 9.5A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 35 nC (max) at 10V and an Input Capacitance (Ciss) of 1415 pF (max) at 400V. The device is housed in a TO-220F-3 package with a through-hole mounting type. It offers a maximum power dissipation of 35W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, server power, industrial power supplies, and solar inverters.
Additional Information
Series: SuperFET® IIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.9mA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1415 pF @ 400 V |
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