FCPF165N65S3L1
MOSFET N-CH 650V 19A TO220F-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi SuperFET® III FCPF165N65S3L1 is a 650 V N-Channel MOSFET featuring low on-resistance of 165mOhm at 9.5A and 10V Vgs. This device offers a continuous drain current of 19A at 25°C with a maximum power dissipation of 35W. Key parameters include a gate charge of 35 nC at 10V and input capacitance (Ciss) of 1415 pF at 400V. The MOSFET utilizes advanced SuperFET® III technology for enhanced performance and is housed in a TO-220F-3 package for through-hole mounting. Its operating temperature range is -55°C to 150°C. This component is suitable for applications in power supply units, lighting, and industrial motor control.
Additional Information
Series: SuperFET® IIIRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.9mA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1415 pF @ 400 V |
Request a Quote
Clients Also Buy
FCD600N65S3R0
MOSFET N-CH 650V 6A DPAK
NTHL082N65S3F
MOSFET N-CH 650V 40A TO247-3
NTHL040N65S3F
MOSFET N-CH 650V 65A TO247-3
