FCPF13N60NT
MOSFET N-CH 600V 13A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperMOS™ FCPF13N60NT is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vds) of 600V and a continuous drain current (Id) rating of 13A at 25°C (Tc), with a maximum power dissipation of 33.8W (Tc). The device offers a low on-resistance (Rds On) of 258mOhm at 6.5A and 10V gate drive. Key parameters include input capacitance (Ciss) of 1765pF at 100V and gate charge (Qg) of 39.5nC at 10V. The FCPF13N60NT is packaged in a TO-220F-3 through-hole configuration and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: SuperMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 258mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 33.8W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 39.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1765 pF @ 100 V |
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