FCP9N60N-F102
MOSFET N-CHANNEL 600V 9A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FCP9N60N-F102 is a 600V N-Channel Power MOSFET designed for high-efficiency power switching applications. This device offers a continuous drain current of 9A (Tc) with a maximum power dissipation of 83.3W (Tc) in a TO-220F package. Key electrical parameters include a low Rds On of 385mOhm at 4.5A, 10V, and a gate charge of 29nC at 10V. The input capacitance (Ciss) is 1240pF at 100V, with a Vgs(th) of 4V at 250µA. It features a ±30V gate-source voltage rating and operates across a wide temperature range of -55°C to 150°C. This component is suitable for use in industrial power supplies, lighting, and motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 385mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83.3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240 pF @ 100 V |
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