FCP650N80Z
MOSFET N-CH 800V 10A TO220Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FCP650N80Z is an 800V N-Channel SuperFET® II MOSFET in a TO-220 package. This component offers a continuous drain current of 10A at 25°C and a maximum power dissipation of 162W. Key electrical characteristics include a drain-source voltage (Vdss) of 800V, a maximum on-resistance (Rds On) of 650mOhm at 4A and 10V, and a gate charge (Qg) of 35 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 1565 pF at 100V. The MOSFET operates within a temperature range of -55°C to 150°C. Applications for this device are found in power supplies, lighting, and industrial motor control.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 162W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 800µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1565 pF @ 100 V |
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