FCP600N60Z
MOSFET N-CH 600V 7.4A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FCP600N60Z is a SuperFET® II series N-Channel Power MOSFET designed for demanding applications. This component features a 600 V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 7.4 A at 25°C. With a maximum power dissipation of 89 W (Tc), it is suitable for high-power switching applications. The Rds(on) is specified at 600 mOhm maximum at 3.7 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 26 nC maximum at 10 V and input capacitance (Ciss) of 1120 pF maximum at 25 V. This MOSFET utilizes advanced planar cell technology to achieve low Rds(on) and low gate charge. The TO-220-3 package with through-hole mounting facilitates integration into various circuit designs. Typical industries benefiting from this device include industrial power supplies, motor control, and lighting solutions.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 25 V |
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