FCP4N60
MOSFET N-CH 600V 3.9A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's FCP4N60 is a SuperFET™ N-Channel MOSFET designed for high-efficiency power conversion applications. This component features a 600V drain-source breakdown voltage and a continuous drain current of 3.9A at 25°C, with a maximum power dissipation of 50W (Tc). The device exhibits a low on-resistance of 1.2 Ohms maximum at 2A, 10V, and a gate charge of 16.6 nC at 10V. Input capacitance (Ciss) is specified at 540 pF maximum at 25V. The FCP4N60 utilizes a TO-220-3 through-hole package and operates across a temperature range of -55°C to 150°C. Its robust design makes it suitable for use in power supplies, industrial automation, and lighting control systems.
Additional Information
Series: SuperFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 25 V |
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