FCP380N60E
MOSFET N-CH 600V 10.2A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi SuperFET® II N-Channel Power MOSFET, part number FCP380N60E, features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 10.2A at 25°C (Tc). This TO-220-3 packaged device offers a maximum on-resistance (Rds On) of 380mOhm at 5A and 10V Vgs. With a gate charge (Qg) of 45 nC (max) at 10V and an input capacitance (Ciss) of 1770 pF (max) at 25V, it is suitable for demanding applications. The device supports a gate-source voltage (Vgs) up to ±20V and has a threshold voltage (Vgs(th)) of 3.5V (max) at 250µA. Power dissipation is rated at 106W (Tc). This component is commonly utilized in power supply units, motor control, and industrial power applications.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 106W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1770 pF @ 25 V |
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