FCP290N80
MOSFET N-CH 800V 17A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi SuperFET® II FCP290N80 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 800 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 17A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 290mOhm at 8.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 75 nC (max) at 10V and an input capacitance (Ciss) of 3205 pF (max) at 100V. The FCP290N80 offers a maximum power dissipation of 212W (Tc) and is housed in a TO-220-3 through-hole package. This MOSFET is suitable for use in power supply units, motor control, and lighting applications, leveraging its high voltage capability and efficient switching characteristics. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 212W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.7mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3205 pF @ 100 V |
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