FCP22N60N-F102
MOSFET N-CH 600V 22A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FCP22N60N-F102 is a 600V N-Channel Power MOSFET with a continuous drain current rating of 22A at 25°C (Tc). This device features a low on-resistance of 165mOhm maximum at 11A and 10V Vgs, and a maximum power dissipation of 205W at 25°C (Tc). Key parameters include a gate charge (Qg) of 45 nC maximum at 10V and input capacitance (Ciss) of 1950 pF maximum at 100V. Designed for through-hole mounting in a TO-220-3 package, the FCP22N60N-F102 is suitable for high-voltage switching applications in power supplies, motor control, and lighting. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage of ±45V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 205W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±45V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 100 V |
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