FCP220N80
MOSFET N-CH 800V 23A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FCP220N80 is an N-Channel SuperFET® II MOSFET designed for high-voltage applications. This component offers an 800 V breakdown voltage (Vdss) and a continuous drain current capability of 23 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 220 mOhm at 11.5 A and 10 V, it ensures efficient power transfer. The device features a high power dissipation of 278 W (Tc) and a gate charge (Qg) of 105 nC at 10 V. Its input capacitance (Ciss) is rated at a maximum of 4560 pF at 100 V. Housed in a TO-220-3 through-hole package, the FCP220N80 operates across a wide temperature range from -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, motor control, and lighting applications.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 2.3mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4560 pF @ 100 V |
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