FCP20N60FS
MOSFET N-CH 600V 20A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi SuperFET™ FCP20N60FS is a 600V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device offers a continuous drain current (Id) of 20A at 25°C (Tc) and a maximum power dissipation of 208W (Tc). Key parameters include a low Rds On of 190mOhm at 10A, 10V and a gate charge (Qg) of 98 nC at 10V. The input capacitance (Ciss) is rated at 3080 pF maximum at 25V. The FCP20N60FS utilizes through-hole mounting in a TO-220F-3 package, making it suitable for demanding applications in power supplies, motor control, and lighting. It operates within an extended temperature range of -55°C to 150°C (TJ).
Additional Information
Series: SuperFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3080 pF @ 25 V |
Request a Quote
Clients Also Buy
FCD5N60TM
MOSFET N-CH 600V 4.6A DPAK
FCB20N60FTM
MOSFET N-CH 600V 20A D2PAK
FCD5N60TM-WS
MOSFET N-CH 600V 4.6A DPAK
