FCP190N60-GF102
MOSFET N-CH 600V 20.2A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi's SuperFET® II series, part number FCP190N60-GF102, is an N-Channel MOSFET designed for high-performance applications. This device offers a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 20.2A at 25°C, with a maximum power dissipation of 208W (Tc). The FCP190N60-GF102 features a low ON-resistance of 199mOhm at 10A, 10V, and a gate charge (Qg) of 74 nC at 10V, facilitating efficient switching. With an input capacitance (Ciss) of 2950 pF at 25V, this MOSFET is suitable for power supply, lighting, and industrial motor control applications. It is packaged in a TO-220-3 through-hole configuration and operates within a temperature range of -55°C to 150°C.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V |
Request a Quote
Clients Also Buy
STD60NF55LAT4
MOSFET N-CH 55V 60A DPAK
FCMT199N60
MOSFET N-CH 600V 20.2A POWER88
FCD380N60E
MOSFET N-CH 600V 10.2A DPAK
