FCP190N60
MOSFET N-CH 600V 20.2A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperFET® II series FCP190N60 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 20.2A at 25°C (Tc). Its low on-resistance of 199mOhm at 10A and 10V (Vgs) contributes to reduced conduction losses. With a maximum power dissipation of 208W (Tc) and a gate charge (Qg) of 74 nC at 10V, it is suitable for demanding power supply designs. The FCP190N60 utilizes advanced MOSFET technology and is housed in a TO-220-3 through-hole package. This device finds application in industries such as industrial power supplies, lighting, and motor control.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V |
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