FCP170N60
MOSFET N-CH 600V 22A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi SuperFET® II FCP170N60 is a 600V N-Channel Power MOSFET designed for high-efficiency applications. Featuring a 170mOhm maximum ON-resistance at 11A and 10V Vgs, this component offers low conduction losses. The device boasts a continuous drain current of 22A at 25°C and a maximum power dissipation of 227W, making it suitable for demanding power conversion tasks. Key electrical characteristics include a gate charge (Qg) of 55 nC at 10V and input capacitance (Ciss) of 2860 pF at 380V. Packaged in a TO-220-3 through-hole configuration, the FCP170N60 operates across a wide temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supplies, industrial motor control, and solar inverters.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 227W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2860 pF @ 380 V |
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