FCP16N60N-F102
MOSFET N-CH 600V 16A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FCP16N60N-F102 is an N-Channel Power MOSFET designed for high-voltage applications. Featuring a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 16A at 25°C, this component offers a maximum on-resistance (Rds On) of 199mOhm at 8A and 10V gate drive. With a maximum power dissipation of 134.4W (Tc), it utilizes a TO-220F package for through-hole mounting. Key electrical parameters include a gate charge (Qg) of 52.3 nC at 10V and input capacitance (Ciss) of 2170 pF at 100V. This device is suitable for use in power supply units, lighting, and industrial motor control applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 134.4W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 52.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2170 pF @ 100 V |
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