FCP165N65S3R0
MOSFET N-CH 650V 19A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperFET® III FCP165N65S3R0 is a 650V N-Channel Power MOSFET designed for high-performance applications. Featuring a low on-resistance of 165mOhm at 9.5A and 10V Vgs, this device offers efficient power switching. The FCP165N65S3R0 boasts a continuous drain current of 19A (Tc) and a maximum power dissipation of 154W (Tc), supported by a robust TO-220-3 through-hole package. Key electrical parameters include a gate charge of 39 nC @ 10V and input capacitance of 1500 pF @ 400V. Its wide operating temperature range of -55°C to 150°C makes it suitable for demanding environments. This MOSFET is commonly utilized in power supply units, industrial motor control, and renewable energy systems.
Additional Information
Series: SuperFET® IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 154W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.9mA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V |
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