FCP13N60N
MOSFET N-CH 600V 13A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SupreMOS™ FCP13N60N is a 600V N-Channel Power MOSFET designed for demanding applications. This device offers a continuous drain current of 13A at 25°C (Tc) and a maximum power dissipation of 116W (Tc). Key electrical characteristics include a drain-source breakdown voltage (Vdss) of 600V, a low on-resistance (Rds On) of 258mOhm at 6.5A and 10V gate drive, and a typical gate charge (Qg) of 39.5 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 1765 pF at 100V. The FCP13N60N features a TO-220-3 through-hole package and operates across an industrial temperature range of -55°C to 150°C (TJ). This component is suitable for use in power supply units, motor control, and general-purpose power switching applications.
Additional Information
Series: SupreMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 258mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 116W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 39.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1765 pF @ 100 V |
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