FCP125N60E
MOSFET N-CH 600V 29A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FCP125N60E is a SuperFET® II series N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 29A at 25°C (Tc), with a maximum power dissipation of 278W (Tc). The Rds On is specified at a maximum of 125mOhm at 14.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 95 nC and input capacitance (Ciss) of 2990 pF at 380V. This TO-220-3 packaged device is suitable for mounting via through-hole and operates within a temperature range of -55°C to 150°C (TJ). The FCP125N60E is utilized in industrial power supplies, server power, and lighting applications.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2990 pF @ 380 V |
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