FCP11N60N-F102
MOSFET N-CH 600V 10.8A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi N-Channel MOSFET, part number FCP11N60N-F102, is a 600V device with a continuous drain current of 10.8A at 25°C. This MOSFET offers a low on-resistance of 299mOhm at 5.4A and 10V, with a gate charge of 35.6 nC at 10V. The input capacitance (Ciss) is 1505 pF maximum at 100V. It is packaged in a TO-220F through-hole configuration, allowing for a maximum power dissipation of 94W. Operating across a wide temperature range of -55°C to 150°C, this component is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 5.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1505 pF @ 100 V |
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