FCP099N60E
MOSFET N-CH 600V 37A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi SuperFET® II N-Channel MOSFET, part number FCP099N60E, offers a 600V drain-source voltage rating and 37A continuous drain current at 25°C (Tc). This TO-220-3 packaged device features a low on-resistance of 99mOhm at 18.5A and 10V gate drive. Key parameters include a maximum gate charge of 114 nC at 10V and input capacitance of 3465 pF at 380V. With a maximum power dissipation of 357W (Tc) and operating temperature range of -55°C to 150°C (TJ), the FCP099N60E is suitable for applications in power supply units, motor drives, and lighting.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 18.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 357W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3465 pF @ 380 V |
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