FCHD190N65S3R0-F155
MOSFET N-CH 650V 17A TO247Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi SuperFET® III FCHD190N65S3R0-F155 is an N-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 650 V. This through-hole component, packaged in a TO-247-3, offers a continuous drain current (Id) of 17 A at 25°C and a maximum power dissipation of 144 W at the same temperature. Its Rds On is specified at a maximum of 190 mOhm at 8.5 A and 10 V drive voltage. Key parameters include a gate charge (Qg) of 33 nC at 10 V and input capacitance (Ciss) of 1350 pF at 400 V. This device is suitable for applications in power supply units, solar inverters, and industrial motor drives.
Additional Information
Series: SuperFET® IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 390µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 400 V |
Request a Quote
Clients Also Buy
FCD600N65S3R0
MOSFET N-CH 650V 6A DPAK
NTHL082N65S3F
MOSFET N-CH 650V 40A TO247-3
NTHL040N65S3F
MOSFET N-CH 650V 65A TO247-3
