FCHD125N65S3R0-F155
MOSFET N-CH 650V 24A TO247Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperFET® III FCHD125N65S3R0-F155 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a drain-source voltage (Vdss) of 650V and a continuous drain current (Id) of 24A at 25°C, with a maximum power dissipation of 181W (Tc). The on-resistance (Rds On) is specified at 125mOhm at 12A, 10V, facilitated by a 10V gate drive voltage. Key parameters include a gate charge (Qg) of 46 nC at 10V and input capacitance (Ciss) of 1940 pF at 400V. The FCHD125N65S3R0-F155 is housed in a TO-247-3 package suitable for through-hole mounting, operating across a wide temperature range of -55°C to 150°C. This component is commonly utilized in power supplies, server systems, and industrial motor drives.
Additional Information
Series: SuperFET® IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 181W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 590µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1940 pF @ 400 V |
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