FCHD040N65S3-F155
MOSFET N-CH 650V 65A TO247Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperFET® III series N-Channel MOSFET, part number FCHD040N65S3-F155, is a 650V device with a continuous drain current capability of 65A at 25°C. This TO-247-3 packaged component features a low on-resistance of 40mOhm at 32.5A and 10V gate drive. With a maximum power dissipation of 417W (Tc) and a gate charge of 136 nC at 10V, it is suitable for high-power applications. The device operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in power supply units, industrial motor control, and electric vehicle charging infrastructure due to its robust performance characteristics.
Additional Information
Series: SuperFET® IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 32.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1.7mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 136 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4740 pF @ 400 V |
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