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FCH47N60NF

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FCH47N60NF

MOSFET N-CH 600V 45.8A TO247-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FCH47N60NF is a SupreMOS™ series N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 45.8A at 25°C (Tc). With a maximum Power Dissipation of 368W (Tc) and a low Rds On of 65mOhm at 23.5A and 10V, it offers efficient power handling. The device utilizes advanced MOSFET (Metal Oxide) technology, incorporating a Gate Charge (Qg) of 157 nC at 10V and an Input Capacitance (Ciss) of 6120 pF at 100V. The FCH47N60NF is supplied in a TO-247-3 through-hole package, suitable for demanding thermal environments. Its operating temperature range is -55°C to 150°C (TJ). This component is commonly found in power factor correction, switch mode power supplies, and motor control applications.

Additional Information

Series: SupreMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C45.8A (Tc)
Rds On (Max) @ Id, Vgs65mOhm @ 23.5A, 10V
FET Feature-
Power Dissipation (Max)368W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6120 pF @ 100 V

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