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FCH47N60F

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FCH47N60F

MOSFET N-CH 600V 47A TO247-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi's FCH47N60F is a SuperFET™ series N-Channel MOSFET designed for high-performance power applications. This component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 47A at 25°C (Tc). With a maximum power dissipation of 417W (Tc), it is well-suited for demanding thermal environments. The device exhibits a low on-resistance (Rds On) of 73mOhm at 23.5A and 10V Vgs, facilitating efficient current handling. Key parameters include a gate charge (Qg) of 270 nC at 10V and an input capacitance (Ciss) of 8000 pF at 25V. The FCH47N60F is supplied in a TO-247-3 package for through-hole mounting, suitable for use in industrial power supplies, motor control, and lighting applications. It operates across a wide temperature range of -55°C to 150°C (TJ).

Additional Information

Series: SuperFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Rds On (Max) @ Id, Vgs73mOhm @ 23.5A, 10V
FET Feature-
Power Dissipation (Max)417W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8000 pF @ 25 V

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