FCH190N65F-F085
MOSFET N-CH 650V 20.6A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi SuperFET® II series N-Channel Power MOSFET, part number FCH190N65F-F085. This TO-247-3 packaged device features a 650V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 20.6A at 25°C (Tc). The Rds(on) is specified at a maximum of 190mOhm at 27A and 10V gate-source voltage. Designed with advanced SuperFET® II technology, it offers excellent switching performance and low on-resistance. Typical applications include power factor correction, switch mode power supplies, and motor control in automotive and industrial sectors. Key electrical parameters include a maximum power dissipation of 208W (Tc), gate charge (Qg) of 82nC at 10V, and input capacitance (Ciss) of 3181pF at 25V. This component is AEC-Q101 qualified.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3181 pF @ 25 V |
| Qualification | AEC-Q101 |
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