FCH099N60E
MOSFET N-CH 600V 37A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperFET® II series N-Channel MOSFET, part number FCH099N60E, offers robust performance for demanding power applications. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 37A at 25°C case temperature. With a maximum on-resistance (Rds On) of 99mOhm at 18.5A and 10V gate-source voltage, it delivers efficient power handling with a maximum power dissipation of 357W (Tc). The TO-247-3 package facilitates through-hole mounting, and the device operates within a junction temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 114nC at 10V and input capacitance (Ciss) of 3465pF at 380V. This MOSFET is suitable for use in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 18.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 357W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3465 pF @ 380 V |
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