FCH077N65F-F085
MOSFET N-CH 650V 54A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SuperFET® II series FCH077N65F-F085 is a high-performance N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 54 A at 25°C, with a maximum power dissipation of 481 W (Tc). The Rds On is specified at a low 77 mOhm maximum at 27 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 164 nC at 10 V and input capacitance (Ciss) of 7162 pF at 25 V.
This MOSFET utilizes advanced MOSFET technology and is housed in a TO-247-3 through-hole package, suitable for robust thermal management. The FCH077N65F-F085 is AEC-Q101 qualified, making it suitable for automotive applications. It operates within a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) range of ±20 V.
Additional Information
Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 27A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 481W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 164 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7162 pF @ 25 V |
| Qualification | AEC-Q101 |
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