FCH041N65F-F155
MOSFET N-CH 650V 76A TO247Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FRFET®, SuperFET® II series FCH041N65F-F155 is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a Drain to Source Voltage (Vdss) of 650 V and a continuous Drain current (Id) of 76 A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 41 mOhm at 38 A and 10 V, it offers efficient power handling with a maximum power dissipation of 595 W (Tc). The device utilizes advanced MOSFET technology for reduced switching and conduction losses. Key parameters include a Gate Charge (Qg) of 294 nC at 10 V and an Input Capacitance (Ciss) of 13020 pF at 100 V. The FCH041N65F-F155 is housed in a TO-247-3 package, suitable for through-hole mounting, and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly employed in power factor correction, switch mode power supplies, and industrial motor control applications.
Additional Information
Series: FRFET®, SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 38A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 595W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 7.6mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 294 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13020 pF @ 100 V |
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