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FCH041N60F-F085

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FCH041N60F-F085

MOSFET N-CH 600V 76A TO247-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FCH041N60F-F085 is a SuperFET® II series N-Channel MOSFET designed for high-performance power applications. This component features a 600V drain-source voltage (Vdss) and a continuous drain current (Id) of 76A at 25°C (Tc), with a maximum power dissipation of 595W (Tc). The low on-resistance (Rds On) of 41mOhm at 38A and 10V drive voltage, coupled with a gate charge (Qg) of 347 nC at 10V, ensures efficient switching characteristics. Manufactured with advanced MOSFET technology, this device offers superior performance and reliability. The FCH041N60F-F085 is housed in a TO-247-3 package for through-hole mounting. It is AEC-Q101 qualified, making it suitable for demanding automotive applications, as well as industrial power supplies and motor control systems. Operating temperature range is from -55°C to 150°C (TJ).

Additional Information

Series: SuperFET® IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 38 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C76A (Tc)
Rds On (Max) @ Id, Vgs41mOhm @ 38A, 10V
FET Feature-
Power Dissipation (Max)595W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247-3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs347 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10900 pF @ 25 V
QualificationAEC-Q101

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