FCD9N60NTM
MOSFET N-CH 600V 9A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi SupreMOS™ FCD9N60NTM is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 600V drain-to-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 9A at 25°C. The FCD9N60NTM offers a low on-resistance of 385mOhm maximum at 4.5A and 10V gate drive, contributing to minimized conduction losses. Key parameters include a gate charge (Qg) of 17.8 nC maximum at 10V and input capacitance (Ciss) of 1000 pF maximum at 100V. With a maximum power dissipation of 92.6W at 25°C (Tc), it is suitable for demanding applications. The component is housed in a TO-252AA (DPAK) surface-mount package and is supplied on tape and reel. Typical industries utilizing this technology include power supplies and industrial automation.
Additional Information
Series: SupreMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 385mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 92.6W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 100 V |
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