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FCD7N60TF

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FCD7N60TF

MOSFET N-CH 600V 7A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi SuperFET™ series FCD7N60TF is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 600V and a continuous drain current (Id) capability of 7A at 25°C. With a maximum power dissipation of 83W (Tc), it offers robust performance in thermal-constrained environments. The Rds On (Max) is specified at 600mOhm at 3.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 30 nC at 10V and an input capacitance (Ciss) of 920 pF at 25V. This MOSFET is housed in a TO-252AA (DPAK) surface mount package and operates across a temperature range of -55°C to 150°C (TJ). It is suitable for use in power supply, lighting, and motor control applications.

Additional Information

Series: SuperFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Rds On (Max) @ Id, Vgs600mOhm @ 3.5A, 10V
FET Feature-
Power Dissipation (Max)83W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 25 V

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